4 inch unpolished SiC wafer manufacturer with thickness 600um conductive N type

If you have purchase demand of unpolished SiC wafer for testing diamond grdingd wheel or abrasives, come and contact HMT. we supply 4 inch 6 inch Conductive N type un polished SiC wafer for customers. we have different thickness of unpolished SiC wafer, such as 600um 900um 1100um and also support customized thickness. The leadtime of As cut SiC wafer will be within 30days and we use cassetee for packing. We deliver unpolished sic wafer to foreign customers via FedEx or DHL global express. Customers are satisfied with our raw cut SiC wafer quality and price. please contact us now!

SiC substrate manufacturing is difficult, is the main reason for the high cost. The thermal field control and crystal seed control are quite key, but can only be native steelmaking, doing the process of learning, learning the process of doing.

SiC long crystal efficiency is 100 to 200 times slower than Si, Si long crystal about 3 days to make 200 cm high crystal bar, SiC to 7 days to grow 2 to 5 cm crystal ball. In addition, SiC hard and brittle, cutting, grinding and polishing difficulty is high, there will be a lot of waste.